TRANSIENT CHARGE-CARRIER DIFFUSION IN HIGH-PURITY SILICON

被引：2
|
作者：
GREEN, M
GREENBERG, IN
机构：
来源：
SOLID-STATE ELECTRONICS | 1960年 / 1卷 / 01期
关键词：
D O I：
10.1016/0038-1101(60)90060-5
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：85 / &
相关论文
共 50 条
  • [41] PRECIPITATION IN HIGH-PURITY SILICON SINGLE CRYSTALS
    NES, E
    WASHBURN, J
    JOURNAL OF APPLIED PHYSICS, 1971, 42 (09) : 3562 - &
  • [42] A STUDY OF HYDROGENATION IN A HIGH-PURITY SILICON CRYSTAL
    CHENGZHOU, JI
    TIANSHENG, SHI
    WANG, P
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 12 (04): : 486 - 489
  • [43] HIGH-PURITY THERMAL-TREATMENT OF SILICON
    BORCHARDT, G
    WEBER, E
    WIEHL, N
    JOURNAL OF APPLIED PHYSICS, 1981, 52 (03) : 1603 - 1604
  • [44] Preparation of high-purity silicon for solar cells
    Gribov, BG
    Zinov'ev, KV
    INORGANIC MATERIALS, 2003, 39 (07) : 653 - 662
  • [45] High-purity, isotopically enriched bulk silicon
    Ager, JW
    Beeman, JW
    Hansen, WL
    Haller, EE
    Sharp, ID
    Liao, C
    Yang, A
    Thewalt, MLW
    Riemann, H
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2005, 152 (06) : G448 - G451
  • [46] PROPERTIES OF HIGH-PURITY SILICON EPITAXIAL LAYERS
    SUZUKI, T
    URA, M
    OGAWA, T
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (03) : C95 - &
  • [47] DEFECT PHOTOLUMINESCENCE IN QUENCHED HIGH-PURITY SILICON
    NAKASHIMA, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (05): : 622 - 627
  • [48] Preparation of High-Purity Silicon for Solar Cells
    B. G. Gribov
    K. V. Zinov'ev
    Inorganic Materials, 2003, 39 : 653 - 662
  • [49] LUMINESCENT DETERMINATION OF VANADIUM IN SILICON OF HIGH-PURITY
    PILIPENKO, AT
    KOSTYSHINA, AP
    NAZARCHUK, NM
    UKRAINSKII KHIMICHESKII ZHURNAL, 1976, 42 (06): : 633 - 635
  • [50] PREPARATION OF HIGH-PURITY SILICON FROM SILANE
    LEWIS, CH
    GIUSTO, MB
    KELLY, HC
    JOHNSON, S
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (08) : C178 - C178
12345