DYNAMIC IV CHARACTERISTICS OF AN ALGAAS/GAAS-BASED OPTOTHYRISTOR FOR PULSED POWER-SWITCHING APPLICATIONS

被引：3
|
作者：
ZHAO, JH
BURKE, T
LARSON, D
WEINER, M
CHIN, A
BALLINGALL, JM
YU, TH
机构：
[1] GE,ELECTR LAB,SYRACUSE,NY 13221
[2] USA,LABCOM,ETD LAB,FT MONMOUTH,NJ 07703
来源：
IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 03期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1109/55.144997
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A high-performance MBE-grown AlGaAs/GaAs-based heterostructure optothyristor has been fabricated and characterized for high-power pulsed switching applications. An LEC undoped semi-insulating GaAs of 650-mu-m in thickness was used as the voltage blocking layer and low-temperature GaAs grown at 200-degrees-C was used to passivate the surface and to reduce the surface leakage current. The dynamic current-voltage characteristics have been measured up to 115 A and 1974 V, which corresponds to a field intensity of more than 30 kV/cm. The dissipated energy per switching as a function of device voltage has also been determined to be in the range of 2 mJ or lower.
引用
收藏
页码：161 / 163
页数：3
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