DYNAMIC IV CHARACTERISTICS OF AN ALGAAS/GAAS-BASED OPTOTHYRISTOR FOR PULSED POWER-SWITCHING APPLICATIONS

被引：3

作者：

ZHAO, JH

BURKE, T

LARSON, D

WEINER, M

CHIN, A

BALLINGALL, JM

YU, TH

机构：

[1] GE,ELECTR LAB,SYRACUSE,NY 13221

[2] USA,LABCOM,ETD LAB,FT MONMOUTH,NJ 07703

来源：

IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 03期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/55.144997

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high-performance MBE-grown AlGaAs/GaAs-based heterostructure optothyristor has been fabricated and characterized for high-power pulsed switching applications. An LEC undoped semi-insulating GaAs of 650-mu-m in thickness was used as the voltage blocking layer and low-temperature GaAs grown at 200-degrees-C was used to passivate the surface and to reduce the surface leakage current. The dynamic current-voltage characteristics have been measured up to 115 A and 1974 V, which corresponds to a field intensity of more than 30 kV/cm. The dissipated energy per switching as a function of device voltage has also been determined to be in the range of 2 mJ or lower.

引用

页码：161 / 163

页数：3

共 42 条

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