AN LPE GROWN INP BASED OPTOTHYRISTOR FOR POWER SWITCHING APPLICATIONS

被引：7

作者：

LIS, RJ ^{[1
]}

ZHAO, JH ^{[1
]}

ZHU, LD ^{[1
]}

ILLAN, J ^{[1
]}

MCAFEE, S ^{[1
]}

BURKE, T ^{[1
]}

WEINER, M ^{[1
]}

BUCHWALD, WR ^{[1
]}

JONES, KA ^{[1
]}

机构：

[1] USA,LABCOM,EPS DIRECTORATE,FT MONMOUTH,NJ 07703

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1994年 / 41卷 / 05期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/16.285035

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the results of a new InP based optothyristor for pulsed high power switching applications and compares them with a traditional InP photoconductive switch operating under similar conditions. The optothyristor utilized a semi-insulating InP wafer inserted between the two PN junctions in a conventional thyristor structure. We also determined the dynamic I-V characteristics and the di/dt turn-on parameter for this novel optothyristor. Using a 1.06 mum YAG laser to trigger the optothyristor, we have achieved a 1200 V (4.8 X 10(4) V/cm) hold-off voltage with a maximum current of 61 A. The current rise time for device turn-on was measured to be consistently under 12 ns, and a maximum di/dt of 1.4 x 10(10)) A/s was obtained.

引用

页码：809 / 813

页数：5

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