LASER ANNEALING OF ION-IMPLANTED SEMICONDUCTORS

被引：3
|
作者：
SEALY, BJ
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1980年 / 48卷 / 04期
关键词：
D O I：
10.1016/0022-0248(80)90276-6
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：655 / 665
页数：11
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