LASER ANNEALING OF ION-IMPLANTED SEMICONDUCTORS

被引：3
|
作者：
SEALY, BJ
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1980年 / 48卷 / 04期
关键词：
D O I：
10.1016/0022-0248(80)90276-6
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：655 / 665
页数：11
相关论文
共 50 条
  • [21] PULSED ELECTRON-BEAM ANNEALING OF ION-IMPLANTED SEMICONDUCTORS
    DVURECHENSKY, AV
    KASHNIKOV, BP
    SMIRNOV, LS
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) : C96 - C96
  • [22] LASER-PULSE ENERGY-DEPENDENCE OF ANNEALING IN ION-IMPLANTED SI AND GAAS SEMICONDUCTORS
    RIMINI, E
    BAERI, P
    FOTI, G
    PHYSICS LETTERS A, 1978, 65 (02) : 153 - 155
  • [23] THEORETICAL INVESTIGATION OF LASER ANNEALING OF ION-IMPLANTED SILICON
    WANG, JC
    WOOD, RF
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1978, 23 (03): : 393 - 393
  • [24] LASER ANNEALING STUDIES ON ION-IMPLANTED IRON IN SILICON
    DAMGAARD, S
    ORON, M
    PETERSEN, JW
    PETRIKIN, YV
    WEYER, G
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 59 (01): : 63 - 67
  • [25] LASER-PULSE ANNEALING OF ION-IMPLANTED GAAS
    CAMPISANO, SU
    FOTI, G
    RIMINI, E
    EISEN, FH
    TSENG, WF
    NICOLET, MA
    TANDON, JL
    JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 295 - 298
  • [26] LASER ANNEALING OF ION-IMPLANTED GALLIUM-ARSENIDE
    OLSON, GL
    ANDERSON, CL
    DUNLAP, HL
    HESS, LD
    MCFARLANE, RA
    PEPPER, DM
    VAIDYANATHAN, KV
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : C362 - C362
  • [27] CHARACTERIZATION OF EXCIMER LASER ANNEALING OF ION-IMPLANTED SI
    YOUNG, RT
    VANDERLEEDEN, GA
    NARAYAN, J
    CHRISTIE, WH
    WOOD, RF
    ROTHE, DE
    LEVATTER, JI
    ELECTRON DEVICE LETTERS, 1982, 3 (10): : 280 - 283
  • [28] DIELECTRICS FOR ANNEALING OF ION-IMPLANTED III-V COMPOUND SEMICONDUCTORS
    SINGH, S
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (08) : C350 - C350
  • [29] Annealing of ion-implanted GaN
    Burchard, A.
    Haller, E.E.
    Stötzler, A.
    Weissenborn, R.
    Deicher, M.
    Physica B: Condensed Matter, 1999, 273 : 96 - 100
  • [30] Annealing of ion-implanted GaN
    Burchard, A
    Haller, EE
    Stötzler, A
    Weissenborn, R
    Deicher, M
    PHYSICA B-CONDENSED MATTER, 1999, 273-4 : 96 - 100
12345