IMPACT OF IRRADIATION ON THE ENERGY RESOLUTION OF SILICON PLANAR DETECTORS

被引：0

作者：

Vasilyev, G. P. ^{[1
]}

Deiev, O. S. ^{[1
]}

Kapliy, O. A. ^{[1
]}

Kiprich, S. K. ^{[1
]}

Maslov, M. I. ^{[1
]}

Ovchinnik, V. D. ^{[1
]}

Potin, S. M. ^{[1
]}

Shulika, M. Y. ^{[1
]}

Yalovenko, V. I. ^{[1
]}

机构：

[1] Kharkov Inst Phys & Technol, Natl Sci Ctr, Kharkov, Ukraine

来源：

PROBLEMS OF ATOMIC SCIENCE AND TECHNOLOGY | 2015年 / 06期

关键词：

D O I：

暂无

中图分类号：

O57 [原子核物理学、高能物理学];

学科分类号：

070202 ;

摘要：

The radiation impact of accelerated electrons on the energy resolution of the planar silicon detectors experimentally investigated. The detectors were irradiated by electrons with energy 25 MeV using "EPOS" linac of NSC KIPT. As a result of experimental studies the data on the degradation of the detector energy resolution under irradiation were obtained. The experimental data of energy resolution changes of the irradiated detectors with different initial energy resolution were obtained as well. Research conducted on the uncooled Si-detectors and readout spectrometric electronics developed and produced at NSC KIPT. The results will be used for development and manufacturing the detectors and detection systems for nuclear power plants and other applications.

引用

页码：114 / 119

页数：6

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