Results of irradiation tests on standard planar silicon detectors with 7-10 MeV protons

被引：20
|
作者：
Bechevet, D
Glaser, M
Houdayer, A
Lebel, C
Leroy, C
Moll, M
Roy, P
机构：
[1] Univ Montreal, Phys Nucl Lab, Montreal, PQ H3C 3J7, Canada
[2] CERN, Div EP, CH-1211 Geneva, Switzerland
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2002年 / 479卷 / 2-3期
基金：
加拿大自然科学与工程研究理事会;
关键词：
silicon detectors; low energy proton irradiation; radiation hardness factors; detectors ageing; standard planar silicon diodes;
D O I：
10.1016/S0168-9002(01)00925-1
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Standard planar silicon detectors of 2 kOhm cm resistivity were irradiated with 7-10 MeV protons up to fluences of 7 x 10(13) p/cm(2). The effects of proton irradiation on the effective doping concentration (N-eff) and leakage current (I-vol) as a function of fluence were investigated. The evolution of N-eff and I-vol as a function of time after irradiation was obtained by heating the detectors to accelerate their ageing. Comparison is done with detectors of the same type irradiated with 24 GeV/c protons. The hardness factors for 7-10 MeV protons are extracted. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：487 / 497
页数：11
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