共 50 条
- [2] PHOTOCONDUCTIVITY OF GALLIUM-ARSENIDE EPITAXIAL LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1995, 77 (10) : 5185 - 5190
- [4] SELENIUM IMPLANTATION IN EPITAXIAL GALLIUM-ARSENIDE LAYERS [J]. NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR): : 709 - 717
- [6] DOPING OF EPITAXIAL GALLIUM-ARSENIDE GROWN BY METALORGANICS METHOD [J]. REVUE DE PHYSIQUE APPLIQUEE, 1982, 17 (07): : 405 - 413
- [7] PECULIARITIES OF DISLOCATION DISTRIBUTION IN EPITAXIAL LAYERS OF GALLIUM-ARSENIDE [J]. UKRAINSKII FIZICHESKII ZHURNAL, 1982, 27 (11): : 1668 - 1670