BERYLLIUM DOPING OF GALLIUM-ARSENIDE METALORGANIC EPITAXIAL LAYERS

被引:0
|
作者
MELLET, R
AZOULAY, R
DUGRAND, L
RAO, EVK
MIRCEA, A
机构
来源
关键词
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:583 / 584
页数:2
相关论文
共 50 条
  • [1] CONTROL OF SULFUR DOPING FOR GALLIUM-ARSENIDE EPITAXIAL LAYERS
    SAVVA, MA
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (10) : 1498 - 1502
  • [2] PHOTOCONDUCTIVITY OF GALLIUM-ARSENIDE EPITAXIAL LAYERS
    PARENTEAU, M
    WU, FM
    JORIO, A
    CARLONE, C
    [J]. JOURNAL OF APPLIED PHYSICS, 1995, 77 (10) : 5185 - 5190
  • [3] STRUCTURAL INHOMOGENEITIES IN GALLIUM-ARSENIDE EPITAXIAL LAYERS
    ASTAKHOV, VM
    ZALETIN, VM
    SIDOROV, YG
    STENIN, SI
    [J]. THIN SOLID FILMS, 1976, 32 (02) : 343 - 345
  • [4] SELENIUM IMPLANTATION IN EPITAXIAL GALLIUM-ARSENIDE LAYERS
    INADA, T
    TOKUNAGA, K
    TAKA, S
    YUGE, Y
    KOHZU, H
    [J]. NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR): : 709 - 717
  • [5] MASS-TRANSFER OF IRON DURING DOPING OF EPITAXIAL LAYERS OF GALLIUM-ARSENIDE
    CHERNOV, NA
    BAKUN, NN
    AKHUNOV, IS
    IKONNIKOVA, GM
    [J]. INORGANIC MATERIALS, 1982, 18 (05) : 730 - 732
  • [6] DOPING OF EPITAXIAL GALLIUM-ARSENIDE GROWN BY METALORGANICS METHOD
    KEIL, G
    LEMETAYER, M
    CUQUEL, A
    LEPOLLOTEC, D
    [J]. REVUE DE PHYSIQUE APPLIQUEE, 1982, 17 (07): : 405 - 413
  • [7] PECULIARITIES OF DISLOCATION DISTRIBUTION IN EPITAXIAL LAYERS OF GALLIUM-ARSENIDE
    DRANENKO, AS
    NOVIKOV, NN
    IVANOV, VN
    [J]. UKRAINSKII FIZICHESKII ZHURNAL, 1982, 27 (11): : 1668 - 1670
  • [8] STUDY OF STRUCTURAL INHOMOGENEITIES IN EPITAXIAL LAYERS OF GALLIUM-ARSENIDE
    KLEBANOVA, NA
    MELAMED, MM
    NOSIKOV, SV
    SOROKIN, IN
    TERENTEVA, GN
    [J]. INORGANIC MATERIALS, 1982, 18 (07) : 925 - 927
  • [9] EPITAXIAL REGROWTH OF IMPLANTED AMORPHOUS LAYERS ON GALLIUM-ARSENIDE
    WILLIAMS, JS
    AUSTIN, MW
    HARRISON, HB
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : C344 - C344
  • [10] MISFIT DISLOCATIONS AND THE MORPHOLOGY OF GALLIUM ALUMINUM ARSENIDE EPITAXIAL LAYERS GROWN ON GALLIUM-ARSENIDE
    BOOYENS, H
    SMALL, MB
    POTEMSKI, RM
    BASSON, JH
    [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) : 4328 - 4329