BERYLLIUM DOPING OF GALLIUM-ARSENIDE METALORGANIC EPITAXIAL LAYERS

被引：0
|
作者：
MELLET, R
AZOULAY, R
DUGRAND, L
RAO, EVK
MIRCEA, A
机构：
来源：
INSTITUTE OF PHYSICS CONFERENCE SERIES | 1982年 / 63期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：583 / 584
页数：2
相关论文
共 50 条
  • [41] SILICON AND GERMANIUM DOPING OF EPITAXIAL GALLIUM-ARSENIDE GROWN BY THE TRIMETHYLGALLIUM-ARSINE METHOD
    BASS, SJ
    [J]. JOURNAL OF CRYSTAL GROWTH, 1979, 47 (5-6) : 613 - 618
  • [42] MODELS FOR HEAVY DOPING EFFECTS IN GALLIUM-ARSENIDE
    BENNETT, HS
    LOWNEY, JR
    [J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (02) : 521 - 527
  • [43] TUNABLE ELECTROABSORPTION IN GALLIUM-ARSENIDE DOPING SUPERLATTICES
    CHANGHASNAIN, CJ
    HASNAIN, G
    JOHNSON, NM
    DOHLER, GH
    MILLER, JN
    WHINNERY, JR
    DIENES, A
    [J]. APPLIED PHYSICS LETTERS, 1987, 50 (14) : 915 - 917
  • [44] CONTROL OF DOPING IN VAPOUR GROWN GALLIUM-ARSENIDE
    BOUCHER, A
    CHANE, JP
    FABRE, E
    [J]. REVUE DE PHYSIQUE APPLIQUEE, 1971, 6 (01): : 5 - &
  • [45] EFFECT OF RARE-EARTH IMPURITIES ON THE ELECTROPHYSICAL PROPERTIES OF EPITAXIAL GALLIUM-ARSENIDE LAYERS
    KULISH, UM
    GAMIDOV, ZS
    [J]. INORGANIC MATERIALS, 1989, 25 (05) : 723 - 724
  • [46] Growth and characterization of epitaxial aluminum layers on gallium-arsenide substrates for superconducting quantum bits
    Tournet, J.
    Gosselink, D.
    Miao, G-X
    Jaikissoon, M.
    Langenberg, D.
    McConkey, T. G.
    Mariantoni, M.
    Wasilewski, Z. R.
    [J]. SUPERCONDUCTOR SCIENCE & TECHNOLOGY, 2016, 29 (06):
  • [47] CRYSTAL-STRUCTURE AND PHYSICAL-PROPERTIES OF EPITAXIAL LAYERS OF CDTE ON GALLIUM-ARSENIDE
    KROTOV, II
    MIKOLYUK, EA
    STARKOVA, GV
    [J]. INORGANIC MATERIALS, 1978, 14 (01) : 44 - 47
  • [48] ACOUSTIC TRANSPORT OF CHARGE IN EPITAXIAL GALLIUM-ARSENIDE STRUCTURES
    POZHELA, Y
    MISHKINIS, R
    RUTKOVSKI, P
    BORISOV, AV
    FEDORETS, VN
    PASHCHENKO, PB
    TIMASHEI, VV
    [J]. RUSSIAN ULTRASONICS, 1994, 24 (03): : 162 - 171
  • [49] INFLUENCE OF COMPENSATION ON EDGE PHOTOLUMINESCENCE OF EPITAXIAL GALLIUM-ARSENIDE
    ARNAUDOV, BG
    BYKOVSKII, VA
    DOMANEVSKII, DS
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (12): : 1541 - 1543
  • [50] LUMINESCENCE OF EPITAXIAL GALLIUM-ARSENIDE HEAVILY DOPED WITH SILICON
    KOVALENKO, VF
    PROKHOROVICH, AV
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (11): : 1333 - 1334
12345