MISFIT DISLOCATIONS AND THE MORPHOLOGY OF GALLIUM ALUMINUM ARSENIDE EPITAXIAL LAYERS GROWN ON GALLIUM-ARSENIDE

被引：2
|
作者：
BOOYENS, H [1 ]
SMALL, MB [1 ]
POTEMSKI, RM [1 ]
BASSON, JH [1 ]
机构：
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源：
JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 06期
关键词：
D O I：
10.1063/1.329248
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：4328 / 4329
页数：2
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