PHOTOLUMINESCENCE PROPERTIES OF EPITAXIAL LAYERS ON HIGHLY DOPED SILICON SUBSTRATES

被引：0
|
作者：
SCHRAMM, G
机构：
[1] Freiberger Elektronikwerkstoffe GmbH, Freiberg, O-9200, Postfach 211
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1992年 / 129卷 / 01期
关键词：
D O I：
10.1002/pssa.2211290131
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
[No abstract available]
引用
收藏
页码：K5 / K10
页数：6
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