QUANTITATIVE MEASURING METHOD OF GROWTH STRIATIONS IN CZOCHRALSKI-GROWN SILICON CRYSTAL

被引：8
|
作者：
IMAI, M
SHIRAISHI, Y
SHIBATA, M
NODA, H
YATSURUGI, Y
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 07期
关键词：
D O I：
10.1149/1.2096129
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：1779 / 1783
页数：5
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