INFRARED QUENCHING OF PHOTOCONDUCTIVITY OF NICKEL-DOPED SILICON

被引：0
|
作者：
AZIMOV, SA [1 ]
SULTANOV, NA [1 ]
ISLAMOV, L [1 ]
NAGMATOV, RN [1 ]
机构：
[1] SV STARODUBTSEV ENGN PHYS INST,TASHKENT,UZSSR
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1974年 / 7卷 / 09期
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D O I：
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
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页码：1227 / 1228
页数：2
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