SPIN DEPENDENT RECOMBINATION AT THE SILICON SILICON DIOXIDE INTERFACE

被引：48
|
作者：
LENAHAN, PM
JUPINA, MA
机构：
[1] Pennsylvania State University, University Park
来源：
COLLOIDS AND SURFACES | 1990年 / 45卷
关键词：
D O I：
10.1016/0166-6622(90)80023-W
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We demonstrate that spin dependent recombination (SDR) has the sensitivity to explore interface and near interface defects in metal/oxide/silicon field effect transistors (MOSFETs) in integrated circuits. We also show that the SDR response of Pb centers is at least qualitatively consistent with the standard Shockley-Read-Hall recombination model. We also show that SDR measurements in the MOS system may provide a critical evaluation of several models which have been proposed to explain the SDR effect. © 1990.
引用
收藏
页码：191 / 211
页数：21
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