SPIN-DEPENDENT RECOMBINATION AT DISLOCATIONS IN HEAT-TREATED SILICON

被引：3

作者：

MAKOSA, A

FIGIELSKI, T

机构：

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1979年 / 91卷 / 01期

关键词：

D O I：

10.1002/pssb.2220910160

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：K65 / K67

页数：3

共 50 条

[1] SPIN-DEPENDENT RECOMBINATION AT DISLOCATIONS IN SILICON
WOSINSKI, T
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[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1975, 71 (01): : K73 - K76
[2] INVESTIGATION OF SPIN-DEPENDENT RECOMBINATION AT DISLOCATIONS IN SILICON
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[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (08): : 932 - 933
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[J]. Soviet physics. Semiconductors, 1982, 16 (08): : 932 - 933
[4] SPIN DEPENDENT RECOMBINATION AT DISLOCATIONS IN SILICON
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[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (06): : 661 - 664
[9] SPIN-DEPENDENT RECOMBINATION AND CONDUCTIVITY AS THE METHOD FOR STUDYING DISLOCATIONS IN SEMICONDUCTORS
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[10] SPIN-DEPENDENT RECOMBINATION AT DISLOCATIONS IN SILICON REVEALED AT REVERSE CURRENT IN A P-N-JUNCTION
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