SPIN DEPENDENT RECOMBINATION AT DISLOCATIONS IN SILICON

被引：13

作者：

NEUBERT, D

HOFFMANN, K

TEICHMANN, H

SCHLIEF, R

机构：

来源：

SOLID-STATE ELECTRONICS | 1978年 / 21卷 / 11-1期

关键词：

D O I：

10.1016/0038-1101(78)90222-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1445 / 1450

页数：6

共 50 条

[1] SPIN-DEPENDENT RECOMBINATION AT DISLOCATIONS IN SILICON
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[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1975, 71 (01): : K73 - K76
[2] INVESTIGATION OF SPIN-DEPENDENT RECOMBINATION AT DISLOCATIONS IN SILICON
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[J]. Soviet physics. Semiconductors, 1982, 16 (08): : 932 - 933
[4] SPIN-DEPENDENT RECOMBINATION AT DISLOCATIONS IN HEAT-TREATED SILICON
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[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1979, 91 (01): : K65 - K67
[5] SPIN DEPENDENT RECOMBINATION AT THE SILICON SILICON DIOXIDE INTERFACE
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[6] RECOMBINATION AT DISLOCATIONS IN SILICON
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[J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1968, 13 (03): : 497 - &
[7] RECOMBINATION AT DISLOCATIONS IN SILICON
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[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 75 (01): : 255 - 262
[8] SPIN-DEPENDENT RECOMBINATION AT DISLOCATIONS IN SILICON REVEALED AT REVERSE CURRENT IN A P-N-JUNCTION
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[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 90 (01): : K81 - K83
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[10] SPIN DEPENDENT RECOMBINATION AND PHOTOCONDUCTIVE RESONANCE IN SILICON
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