HIGH-TEMPERATURE ANNEALING BEHAVIOR OF SCHOTTKY BARRIERS ON GAAS WITH GOLD AND GOLD-GALLIUM CONTACTS

被引：47
|
作者：
GUHA, S [1 ]
ARORA, BM [1 ]
SALVI, VP [1 ]
机构：
[1] TATA INST FUNDAMENTAL RES,BOMBAY 400005,INDIA
来源：
SOLID-STATE ELECTRONICS | 1977年 / 20卷 / 05期
关键词：
D O I：
10.1016/0038-1101(77)90135-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：431 / &
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