HIGH-TEMPERATURE ANNEALING BEHAVIOR OF SCHOTTKY BARRIERS ON GAAS WITH GOLD AND GOLD-GALLIUM CONTACTS

被引：47
|
作者：
GUHA, S [1 ]
ARORA, BM [1 ]
SALVI, VP [1 ]
机构：
[1] TATA INST FUNDAMENTAL RES,BOMBAY 400005,INDIA
来源：
SOLID-STATE ELECTRONICS | 1977年 / 20卷 / 05期
关键词：
D O I：
10.1016/0038-1101(77)90135-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：431 / &
相关论文
共 50 条
  • [31] High-temperature seedless synthesis of gold nanorods
    Zijlstra, Peter
    Bullen, Craig
    Chon, James W. M.
    Gu, Min
    JOURNAL OF PHYSICAL CHEMISTRY B, 2006, 110 (39): : 19315 - 19318
  • [32] Gallium desorption behavior at AlGaAs/GaAs heterointerfaces during high-temperature molecular beam epitaxy
    Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1997, 15 (04):
  • [33] Gallium desorption behavior at AlGaAs/GaAs heterointerfaces during high-temperature molecular beam epitaxy
    Mahalingam, K
    Dorsey, DL
    Evans, KR
    Venkat, R
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (04): : 1159 - 1162
  • [34] BEHAVIOR OF GOLD BLOCKING CONTACTS TO CDS AT HIGH IMPRESSED FIELDS
    MULLER, RS
    JOURNAL OF APPLIED PHYSICS, 1963, 34 (08) : 2401 - &
  • [35] HIGH-TEMPERATURE ANNEALING BEHAVIOR OF OXYGEN IN SILICON
    RUIZ, HJ
    POLLACK, GP
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (01) : 128 - 135
  • [36] NONALLOYED, HIGH-TEMPERATURE STABLE OHMIC CONTACTS TO GAAS BASED ON LAB6 DIFFUSION-BARRIERS
    WURFL, J
    FRICKE, K
    HARTNAGEL, HL
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1990, (112): : 239 - 244
  • [37] OHMIC CONTACTS TO ZINC TELLURIDE AND THEIR HIGH-TEMPERATURE BEHAVIOR
    LUQMAN, MM
    BROWN, WD
    HAJGHASSEM, HS
    JOURNAL OF ELECTRONIC MATERIALS, 1987, 16 (02) : 123 - 126
  • [38] THERMAL-CONVERSION OF SEMIINSULATING GAAS IN HIGH-TEMPERATURE ANNEALING
    OHKUBO, N
    SHISHIKURA, M
    MATSUMOTO, S
    JOURNAL OF APPLIED PHYSICS, 1993, 73 (02) : 615 - 618
  • [39] HIGH-TEMPERATURE ANNEALING OF SIO2-GAAS SYSTEM
    OHDOMARI, I
    MIZUTANI, S
    KUME, H
    MORI, M
    KIMURA, I
    YONEDA, K
    APPLIED PHYSICS LETTERS, 1978, 32 (04) : 218 - 220
  • [40] Multilayer TiN/Ti films for high-temperature annealing of GaAs
    Yokota, K
    Nakamura, K
    Satho, M
    Takano, H
    THIN SOLID FILMS, 2002, 406 (1-2) : 87 - 92
12345