共 50 条
- [21] INELASTIC CAPTURE OF ELECTRONS BY SHALLOW NEUTRAL IMPURITIES IN SEMICONDUCTORS UNDER PIEZOELECTRIC INTERACTION CONDITIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (04): : 467 - 469
- [22] PHOTOIONIZATION OF DEEP IMPURITY CENTERS IN SEMICONDUCTORS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (10): : 1117 - 1120
- [23] CAPTURE AND RECOMBINATION AT MULTIELECTRON CAPTURE CENTERS IN SEMICONDUCTORS SOVIET PHYSICS-SOLID STATE, 1961, 2 (11): : 2443 - 2451
- [27] INELASTIC IMPURITY SCATTERING OF HOT ELECTRONS IN SEMICONDUCTORS PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1971, 48 (01): : 65 - +
- [28] EFFECT OF AN IMPURITY ON ENERGY SPECTRUM OF ELECTRONS IN SEMICONDUCTORS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 2 (12): : 1425 - &
- [29] CASCADE CAPTURE OF ELECTRONS BY IONIZED IMPURITIES PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 134 (1A): : A250 - &
- [30] ENERGY-LEVELS OF ELECTRONS AT SHORT-LIVED IMPURITY CENTERS IN ZERO-GAP SEMICONDUCTORS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (11): : 1254 - 1256