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- [2] A POSSIBLE METHOD OF DETERMINING THE RATIO OF CAPTURE CROSS SECTIONS OF RECOMBINATION CENTERS IN SEMICONDUCTORS SOVIET PHYSICS-SOLID STATE, 1960, 1 (11): : 1612 - 1614
- [3] CAPTURE OF CARRIERS BY ATTRACTIVE CENTERS IN SEMICONDUCTORS (REVIEW) SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (01): : 1 - 18
- [4] PECULIARITIES OF THE RECOMBINATION AND CAPTURE PROCESS IN AMORPHOUS-SEMICONDUCTORS, CONTAINING CENTERS WITH NEGATIVE CORRELATION ENERGIES PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1984, 10 (08): : 463 - 467
- [6] CASCADE CAPTURE OF ELECTRONS BY IMPURITY CENTERS IN PIEZOELECTRIC SEMICONDUCTORS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 4 (05): : 815 - +
- [7] CAPTURE OF CHARGE-CARRIERS ON ATTRACTING CENTERS IN SEMICONDUCTORS IZVESTIYA AKADEMII NAUK SSSR SERIYA FIZICHESKAYA, 1978, 42 (06): : 1149 - 1153
- [8] DRIFT MOBILITY IN PRESENCE OF CAPTURE-RECOMBINATION CENTERS FIZIKA TVERDOGO TELA, 1977, 19 (05): : 1456 - 1458
- [9] CAPTURE OF CARRIERS WITH EXCITATION OF LOCAL VIBRATIONS OF COULOMB CENTERS IN SEMICONDUCTORS IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1984, 27 (05): : 37 - 39
- [10] HOPPING PROCESS IN MAJORITY CARRIER CAPTURE OF DEEP CENTERS IN SEMICONDUCTORS PHYSICA SCRIPTA, 1987, 35 (05): : 717 - 720