共 50 条
- [34] DETERMINATION OF DEEP-LEVEL PARAMETERS BY ISOTHERMAL DEEP-LEVEL TRANSIENT SPECTROSCOPY WITH OPTICAL-EXCITATION PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1993, 138 (01): : 241 - 248
- [35] INTERPRETATION OF DEEP-LEVEL OPTICAL SPECTROSCOPY AND DEEP-LEVEL TRANSIENT SPECTROSCOPY DATA - APPLICATION TO IRRADIATION DEFECTS IN GAAS PHYSICAL REVIEW B, 1984, 30 (10): : 5822 - 5834
- [36] Concentration study of deep-level Cu center in Cu-diffused Si crystals by deep-level transient spectroscopy and photoluminescence measurements Japanese Journal of Applied Physics, Part 2: Letters, 2006, 45 (1-3):
- [37] Concentration study of deep-level Cu center in Cu-diffused Si crystals by deep-level transient spectroscopy and photoluminescence measurements JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (1-3): : L80 - L82
- [38] SPECTRAL ANALYSIS OF DEEP LEVEL TRANSIENT SPECTROSCOPY (SADLTS). Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1987, 26 (10): : 1634 - 1640
- [40] Bond-centered hydrogen in silicon studied by in situ deep-level transient spectroscopy PHYSICAL REVIEW B, 1999, 60 (03): : 1716 - 1728