BALLISTIC TRANSPORT IN SEMICONDUCTOR AT LOW-TEMPERATURES FOR LOW-POWER HIGH-SPEED LOGIC

被引：264
|
作者：
SHUR, MS [1 ]
EASTMAN, LF [1 ]
机构：
[1] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1979年 / 26卷 / 11期
关键词：
D O I：
10.1109/T-ED.1979.19671
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1677 / 1683
页数：7
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