SUBTHRESHOLD TRANSCONDUCTANCE IN THE LONG-CHANNEL MOSFET

被引：0
|
作者：
SCHRIMPF, RD
JU, DH
WARNER, RM
机构：
来源：
SOLID-STATE ELECTRONICS | 1987年 / 30卷 / 10期
关键词：
D O I：
10.1016/0038-1101(87)90097-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：1043 / 1048
页数：6
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