LASER-INDUCED BREAKDOWN IN CRYSTALLINE AND AMORPHOUS SIO2

被引：19
|
作者：
SOILEAU, MJ [1 ]
BASS, M [1 ]
机构：
[1] UNIV SO CALIF,CTR LASER STUDIES,LOS ANGELES,CA 90007
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1980年 / 16卷 / 08期
关键词：
Compendex;
D O I：
10.1109/JQE.1980.1070577
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
LASERS
引用
收藏
页码：814 / 814
页数：1
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