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- [2] PREPARATION OF HYDROGENATED AMORPHOUS-SILICON WITH TUNABLE GAP BY HOMOGENEOUS CHEMICAL VAPOR-DEPOSITIONJOURNAL OF APPLIED PHYSICS, 1990, 68 (01) : 143 - 157QIAN, ZMVANAMMEL, AMICHIEL, HNIJS, JMERTENS, R
- [3] THE PREPARATION OF INSITU DOPED HYDROGENATED AMORPHOUS-SILICON BY HOMOGENEOUS CHEMICAL VAPOR-DEPOSITIONJOURNAL OF APPLIED PHYSICS, 1983, 54 (03) : 1461 - 1465MEYERSON, BSSCOTT, BAWOLFORD, DJ
- [4] LOW DEFECT DENSITY AMORPHOUS HYDROGENATED SILICON PREPARED BY HOMOGENEOUS CHEMICAL VAPOR-DEPOSITIONAPPLIED PHYSICS LETTERS, 1982, 40 (11) : 973 - 975SCOTT, BAREIMER, JAPLECENIK, RMSIMONYI, EEREUTER, W
- [5] CHEMICAL VAPOR-DEPOSITION OF AMORPHOUS HYDROGENATED SILICON WITH A CO2-LASER - CHEMICAL MECHANISMTHIN SOLID FILMS, 1992, 218 (1-2) : 29 - 39HESCH, KKARSTENS, HHESS, P
- [6] PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON PREPARED BY CHEMICAL VAPOR-DEPOSITIONJOURNAL OF APPLIED PHYSICS, 1984, 55 (12) : 4309 - 4317ELLIS, FBGORDON, RGPAUL, WYACOBI, BG
- [7] PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON PREPARED BY CHEMICAL VAPOR-DEPOSITIONJOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 719 - 722ELLIS, FBGORDON, RGPAUL, WYACOBI, BG
- [8] CHEMICAL VAPOR-DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON FROM DISILANEJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (10) : 2960 - 2968BOGAERT, RJRUSSELL, TWFKLEIN, MTROCHELEAU, REBARON, BN
- [9] HYDROGENATED AMORPHOUS-SILICON SCHOTTKY-BARRIER STRUCTURES PREPARED BY HOMOGENEOUS CHEMICAL VAPOR-DEPOSITIONJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (08) : C319 - C320KANICKI, JNIJS, JFSCOTT, BAPLECENIK, RMMEYERSON, BS
- [10] CHEMICAL VAPOR-DEPOSITION OF BORON-DOPED HYDROGENATED AMORPHOUS-SILICONAPPLIED PHYSICS LETTERS, 1985, 47 (02) : 135 - 137ELLIS, FBDELAHOY, AE