KINETICS AND MECHANISM OF AMORPHOUS HYDROGENATED SILICON GROWTH BY HOMOGENEOUS CHEMICAL VAPOR-DEPOSITION

被引：112
|
作者：
SCOTT, BA
PLECENIK, RM
SIMONYI, EE
机构：
来源：
APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 01期
关键词：
D O I：
10.1063/1.92521
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：73 / 75
页数：3
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