VALLEY MIXING IN SHORT-PERIOD SUPERLATTICES AND THE INTERFACE MATRIX

被引：34
|
作者：
ANDO, T
机构：
[1] Institute for Solid State Physics, University of Tokyo, Minato-ku, Tokyo 106
来源：
PHYSICAL REVIEW B | 1993年 / 47卷 / 15期
关键词：
D O I：
10.1103/PhysRevB.47.9621
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Energy levels of short-period GaAs/AlAs superlattices are calculated both in an sps * tight-binding model and in an effective-mass approximation. Mixing between GAMMA and X conduction-band valleys is shown to be successfully described by a current-conserving interface matrix giving boundary conditions among envelope functions and their derivatives at a heterointerface. Two parameters characterizing the mixing are determined.
引用
收藏
页码：9621 / 9628
页数：8
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