共 50 条
- [42] Boron diffusion in ultrathin silicon dioxide layers PHYSICS AND CHEMISTRY OF SIO(2) AND THE SI-SIO(2) INTERFACE-3, 1996, 1996, 96 (01): : 200 - 213
- [44] Diffusion behavior of transition metals penetrating silicon substrate through silicon dioxides by dopant ion implantation ULTRA CLEAN PROCESSING OF SEMICONDUCTOR SURFACES XI, 2013, 195 : 261 - 264
- [46] H-2-ENHANCED EPITAXIAL REGROWTH OF POLYCRYSTALLINE SILICON THROUGH NATURAL OXIDE LAYERS ON SILICON SUBSTRATES JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (05): : 518 - 523
- [47] Ion Diffusion Study in the Oxide Layers Due to Oxidation of AISI 439 Ferritic Stainless Steel OXIDATION OF METALS, 2014, 81 (3-4): : 407 - 419
- [48] Ion Diffusion Study in the Oxide Layers Due to Oxidation of AISI 439 Ferritic Stainless Steel Oxidation of Metals, 2014, 81 : 407 - 419
- [49] Investigation of structure and composition of buried oxide layers formed by oxygen-ion implantation into silicon RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2009, 164 (01): : 49 - 58
- [50] FORMATION OF INTRINSIC OXIDE LAYERS BY ION-IMPLANTATION OF SILICON AND TITANIUM IN THE LOW KILOELECTRONVOLT REGIME MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 1991, 139 : 214 - 219