HIGH-QUALITY INGAN FILMS BY ATOMIC LAYER EPITAXY

被引：36

作者：

BOUTROS, KS ^{[1
]}

MCINTOSH, FG ^{[1
]}

ROBERTS, JC ^{[1
]}

BEDAIR, SM ^{[1
]}

PINER, EL ^{[1
]}

ELMASRY, NA ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV, DEPT MAT SCI & ENGN, RALEIGH, NC 27695 USA

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 13期

关键词：

D O I：

10.1063/1.114355

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InxGa1-xN single-crystal films were grown at 600-700 degrees C by atomic layer epitaxy (ALE). InGaN films with compositions of up to 27% indium were achieved. The full width at half-maximum (FWHM) of the (0002) InxGa1-xN peak by double crystal x-ray diffraction (DCXRD) was as small as 6 min, the lowest value reported for this ternary alloy. Strong photoluminescence band edge emission between 360 and 446 nm was observed at room temperature. These low temperature ALE grown films were achieved without the need to use excessive flows of the In organometallic source and thus demonstrate the potential for growth of this ternary alloy over the entire composition range. (C) 1995 American Institute of Physics.

引用

页码：1856 / 1858

页数：3

共 50 条

[31] High-quality InGaN/GaN heterojunctions and their photovoltaic effects
Zheng, Xinhe
Horng, Ray-Hua
Wuu, Dong-Sing
Chu, Mu-Tao
Liao, Wen-Yih
Wu, Ming-Hsien
Lin, Ray-Ming
Lu, Yuan-Chieh
APPLIED PHYSICS LETTERS, 2008, 93 (26)
[32] High-quality slot waveguide ring resonator based on atomic layer deposition
Autere, A.
Karvonen, L.
Saynatjoki, A.
Roussey, M.
Farm, E.
Kemell, M.
Tu, X.
Liow, T. Y.
Lo, G. Q.
Ritala, M.
Leskela, M.
Honkanen, S.
Sun, Z.
SILICON PHOTONICS X, 2015, 9367
[33] High-Quality Plasmonic Materials TiN and ZnO:Al by Atomic Layer Deposition
Izyumskaya, Natalia
Fomra, Dhruv
Ding, Kai
Morkoc, Hadis
Kinsey, Nathaniel
ozgur, Umit
Avrutin, Vitaliy
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2021, 15 (10):
[34] High-quality atomic-layer materials fabricated by chemical vapor deposition
Wang, Shengnan
Taniyasu, Yoshitaka
NTT Technical Review, 2019, 17 (10): : 24 - 29
[35] Atomic layer deposition of AlN using atomic layer annealing-Towards high-quality AlN on vertical sidewalls
Osterlund, Elmeri
Seppaenen, Heli
Bespalova, Kristina
Miikkulainen, Ville
Paulasto-Kroeckel, Mervi
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2021, 39 (03):
[36] High-quality GaAs films on Si substrates grown by atomic hydrogen-assisted molecular beam epitaxy for solar cell applications
Okada, Yoshitaka, 1600, (32):
[37] HIGH-QUALITY PYROGRAPHITE FILMS
MURAKAMI, M
WATANABE, K
YOSHIMURA, S
APPLIED PHYSICS LETTERS, 1986, 48 (23) : 1594 - 1596
[38] High-quality GaN on AlN multiple intermediate layer with migration enhanced epitaxy by rf-molecular beam epitaxy
Sugihara, D
Kikuchi, A
Kusakabe, K
Nakamura, S
Toyoura, Y
Yamada, T
Kishino, K
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2000, 39 (3AB): : L197 - L199
[39] High-quality GaN on AIN multiple intermediate layer with migration enhanced epitaxy by RF-molecular beam epitaxy
Sugihara, Daisuke, 2000, JJAP, Tokyo (39):
[40] ATOMIC LAYER EPITAXY GROWTH OF ALN THIN-FILMS
ELERS, KE
RITALA, M
LESKELA, M
JOHANSSON, LS
JOURNAL DE PHYSIQUE IV, 1995, 5 (C5): : 1021 - 1027

← 1 2 3 4 5 →