ELECTRONIC-STRUCTURE OF PERIODIC RANDOM SUPERLATTICE [(GAAS)(M)/(ALAS)(N)](L)

被引：8
|
作者：
WANG, EG
XU, JH
SU, WP
TING, CS
机构：
[1] UNIV HOUSTON,TEXAS CTR SUPERCOND,HOUSTON,TX 77204
[2] UNIV HOUSTON,DEPT PHYS,HOUSTON,TX 77204
来源：
APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 10期
关键词：
D O I：
10.1063/1.109693
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The electronic structure of a realistic three-dimensional periodic random superlattice (SL) [(GaAs)m/(AlAs)n]l are calculated for the first time using the large-cluster recursion method within the tight-binding framework. It is found that the localized valance band-tail states of the random SL, which are almost independent of the AlAs concentration, extend to the band-gap region of the corresponding ordered SL. The central peaks in the Al s and Ga s states which vary with the Al concentration are studied, and comparison with the alloy AlxGa1-xAs is made. Our results provide a guide to the band-pp engineering of the random superlattices.
引用
收藏
页码：1411 / 1413
页数：3
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