ELECTRONIC-STRUCTURE OF PERIODIC RANDOM SUPERLATTICE [(GAAS)(M)/(ALAS)(N)](L)

被引：8

作者：

WANG, EG

XU, JH

SU, WP

TING, CS

机构：

[1] UNIV HOUSTON,TEXAS CTR SUPERCOND,HOUSTON,TX 77204

[2] UNIV HOUSTON,DEPT PHYS,HOUSTON,TX 77204

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 10期

关键词：

D O I：

10.1063/1.109693

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electronic structure of a realistic three-dimensional periodic random superlattice (SL) [(GaAs)m/(AlAs)n]l are calculated for the first time using the large-cluster recursion method within the tight-binding framework. It is found that the localized valance band-tail states of the random SL, which are almost independent of the AlAs concentration, extend to the band-gap region of the corresponding ordered SL. The central peaks in the Al s and Ga s states which vary with the Al concentration are studied, and comparison with the alloy AlxGa1-xAs is made. Our results provide a guide to the band-pp engineering of the random superlattices.

引用

页码：1411 / 1413

页数：3

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