ROLE OF BOND-STRAIN IN THE CHEMISTRY OF HYDROGEN ON THE SI(100) SURFACE

被引:253
|
作者
BOLAND, JJ
机构
[1] IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights
关键词
D O I
10.1016/0039-6028(92)90214-Q
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A scanning tunneling microscopy (STM) study of the chemistry of hydrogen on the Si(100) surface is presented. The structure and stability of the hydrogenated 2 x 1, 3 x 1 and 1 x 1 surfaces are studied. The 2 x 1 and 3 x 1 surfaces are shown to be well ordered and stable in the presence of atomic hydrogen under their respective formation conditions. In contrast, the 1 x 1 structure is poorly ordered and susceptible to spontaneous etching by hydrogen atoms. No uniform 1 x 1 dihydride phase was observed under any conditions. The existence of this intermediate 3 x 1 phase and the susceptibility of the 1 x 1 structure to etching are both shown to be due to the strain associated with the dihydride units on the 1 x 1 surface. The repulsive steric interaction between dihydride units on this surface weakens the Si-H bonds and stabilizes the 3 x 1 surface observed at 400 K. The Si-Si backbonds of these dihydride units are also strained, resulting in a lower barrier to reaction which is responsible for the etching observed on the 1 x 1 surface.
引用
收藏
页码:17 / 28
页数:12
相关论文
共 50 条
  • [41] Strain relaxation of epitaxial SiGe layers on Si(100) improved by hydrogen implantation
    Mantl, S.
    Hollaender, B.
    Liedtke, R.
    Mesters, S.
    Herzog, H.J.
    Kibbel, H.
    Hackbarth, T.
    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1999, 147 (1-4): : 29 - 34
  • [42] Strain relaxation of epitaxial SiGe layers on Si(100) improved by hydrogen implantation
    Mantl, S
    Holländer, B
    Liedtke, R
    Mesters, S
    Herzog, HJ
    Kibbel, H
    Hackbarth, T
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1999, 147 (1-4): : 29 - 34
  • [43] COLL 12-Production of highly homogeneous Si(100) surfaces by etching: Surface morphology and the role of strain
    Hines, Melissa A.
    Faggin, Marc A.
    Green, Sara K.
    Clark, Ian T.
    Queeney, K. T.
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2006, 232
  • [44] Driving force and bond strain for the C-Ni(100) surface reaction
    Sun, CQ
    Hing, P
    SURFACE REVIEW AND LETTERS, 1999, 6 (01) : 109 - 114
  • [45] Morphology of NiSi film on Si(100): Role of the interface strain.
    Maillard-Schaller, E
    Boyanov, BI
    English, S
    Nemanich, RJ
    ADVANCED INTERCONNECTS AND CONTACT MATERIALS AND PROCESSES FOR FUTURE INTEGRATED CIRCUITS, 1998, 514 : 185 - 189
  • [46] Band Engineering of Dangling-Bond Wires on the Si(100)H Surface
    Robles, Roberto
    Kepenekian, Michael
    Joachim, Christian
    Rurali, Ricardo
    Lorente, Nicolas
    ON-SURFACE ATOMIC WIRES AND LOGIC GATES, 2017, : 83 - 93
  • [47] Dissociation of a surface bond by direct optical excitation: H-Si(100)
    Vondrak, T
    Zhu, XY
    PHYSICAL REVIEW LETTERS, 1999, 82 (09) : 1967 - 1970
  • [48] Strain relaxation mechanism for hydrogen-implanted Si1-xGex/Si(100) heterostructures
    Trinkaus, H
    Holländer, B
    Rongen, S
    Mantl, S
    Herzog, HJ
    Kuchenbecker, J
    Hackbarth, T
    APPLIED PHYSICS LETTERS, 2000, 76 (24) : 3552 - 3554
  • [49] Atomic hydrogen induced gallium nanocluster formation on the Si(100) surface
    Mach, Jindrich
    Cechal, Jan
    Kolibal, Miroslav
    Potocek, Michal
    Sikola, Tomas
    SURFACE SCIENCE, 2008, 602 (10) : 1898 - 1902
  • [50] Removal of oxygen from the Si(100) surface in a DC hydrogen plasma
    Kroon, R
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (08): : 5068 - 5071