ROLE OF BOND-STRAIN IN THE CHEMISTRY OF HYDROGEN ON THE SI(100) SURFACE

被引:253
|
作者
BOLAND, JJ
机构
[1] IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights
关键词
D O I
10.1016/0039-6028(92)90214-Q
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A scanning tunneling microscopy (STM) study of the chemistry of hydrogen on the Si(100) surface is presented. The structure and stability of the hydrogenated 2 x 1, 3 x 1 and 1 x 1 surfaces are studied. The 2 x 1 and 3 x 1 surfaces are shown to be well ordered and stable in the presence of atomic hydrogen under their respective formation conditions. In contrast, the 1 x 1 structure is poorly ordered and susceptible to spontaneous etching by hydrogen atoms. No uniform 1 x 1 dihydride phase was observed under any conditions. The existence of this intermediate 3 x 1 phase and the susceptibility of the 1 x 1 structure to etching are both shown to be due to the strain associated with the dihydride units on the 1 x 1 surface. The repulsive steric interaction between dihydride units on this surface weakens the Si-H bonds and stabilizes the 3 x 1 surface observed at 400 K. The Si-Si backbonds of these dihydride units are also strained, resulting in a lower barrier to reaction which is responsible for the etching observed on the 1 x 1 surface.
引用
收藏
页码:17 / 28
页数:12
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