REACTION-MECHANISM FOR FLUORINE ETCHING OF SILICON

被引：52
|
作者：
GARRISON, BJ [1 ]
GODDARD, WA [1 ]
机构：
[1] CALTECH,ARTHUR AMOS NOYES LAB CHEM PHYS,PASADENA,CA 91125
来源：
PHYSICAL REVIEW B | 1987年 / 36卷 / 18期
关键词：
D O I：
10.1103/PhysRevB.36.9805
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
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页码：9805 / 9808
页数：4
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