PHOTOELECTRIC PROPERTIES OF INDIUM-DOPED SILICON

被引：0

作者：

GODIK, EE ^{[1
]}

SINIS, VP ^{[1
]}

机构：

[1] ACAD SCI USSR,INST RADIOENGN & ELECTR,MOSCOW V-71,USSR

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1977年 / 11卷 / 03期

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中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

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页码：347 / 348

页数：2

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