PHOTOELECTRIC PROPERTIES OF INDIUM-DOPED SILICON

被引：0
|
作者：
GODIK, EE [1 ]
SINIS, VP [1 ]
机构：
[1] ACAD SCI USSR,INST RADIOENGN & ELECTR,MOSCOW V-71,USSR
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1977年 / 11卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
下载
收藏
页码：347 / 348
页数：2
相关论文
共 50 条
  • [1] OPTICAL PROPERTIES OF INDIUM-DOPED SILICON
    NEWMAN, R
    PHYSICAL REVIEW, 1955, 99 (02): : 465 - 467
  • [2] PHOTOELECTRIC EFFECTS IN INDIUM-DOPED PBTE
    AKIMOV, BA
    BRANDT, NB
    KURBANOV, KR
    RYABOVA, LI
    KHASANOV, AT
    KHOKHLOV, DR
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (09): : 1021 - 1024
  • [3] PHOTOCONDUCTIVITY IN INDIUM-DOPED SILICON
    BLAKEMORE, JS
    CANADIAN JOURNAL OF PHYSICS, 1956, 34 (09) : 938 - 948
  • [4] SOLUTION GROWTH OF INDIUM-DOPED SILICON
    SCOTT, W
    HAGER, RJ
    JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (05) : 581 - 602
  • [5] SUPERSHALLOW LEVELS IN INDIUM-DOPED SILICON
    CEROFOLINI, GF
    PIGNATEL, GU
    MAZZEGA, E
    OTTAVIANI, G
    JOURNAL OF APPLIED PHYSICS, 1985, 58 (06) : 2204 - 2207
  • [6] OPTICAL-PROPERTIES OF INDIUM-DOPED SILICON RE-INSPECTED
    SCHELTER, W
    HELL, W
    HELBIG, R
    SCHULZ, M
    JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (28): : 5839 - 5850
  • [7] SPECTRAL DEPENDENCE OF PHOTOCONDUCTIVITY IN INDIUM-DOPED SILICON
    MASON, HW
    BLAKEMORE, JS
    JOURNAL OF APPLIED PHYSICS, 1972, 43 (06) : 2810 - +
  • [8] Optical absorption properties of indium-doped thin crystalline silicon films
    Kasai, H
    Matsumura, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (10): : 5609 - 5613
  • [9] SOME UNEXPECTED EQUILIBRIUM AND TRANSPORT PROPERTIES IN INDIUM-DOPED SILICON.
    CAPPELLETTI, P.
    CEROFOLINI, G.F.
    PIGNATEL, G.U.
    1600, (V 53):
  • [10] SOME UNEXPECTED EQUILIBRIUM AND TRANSPORT-PROPERTIES IN INDIUM-DOPED SILICON
    CAPPELLETTI, P
    CEROFOLINI, GF
    PIGNATEL, GU
    JOURNAL OF APPLIED PHYSICS, 1982, 53 (09) : 6457 - 6458
12345