IMPLANTED CARBON - AN EFFECTIVE ETCH-STOP IN SILICON

被引：12
|
作者：
LEHMANN, V [1 ]
MITANI, K [1 ]
FEIJOO, D [1 ]
GOSELE, U [1 ]
机构：
[1] DUKE UNIV,SCH ENGN,DURHAM,NC 27706
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1991年 / 138卷 / 05期
关键词：
D O I：
10.1149/1.2085826
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Etch-rate measurements in KOH and ethylene diamine pyrocatechol (EDP) solutions have been made with carbon implanted silicon samples. It is shown that an implanted carbon layer is an effective etch-stop in silicon and allows the production of silicon-on-insulator (SOI) layers thinner than 0.1-mu-m with a single etch-stop layer.
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收藏
页码：L3 / L4
页数：2
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