EPITAXIAL-GROWTH OF BI4TI3O12 THIN-FILMS BY DUAL ION-BEAM SPUTTERING

被引：2
|
作者：
ICHIKAWA, Y
ADACHI, H
SETSUNE, K
WASA, K
机构：
[1] Central Research Laboratories, Matsushita Electric Ind. Co., Ltd., Moriguchi, Osaka, 570, Yagumo-nakumachi
来源：
APPLIED SURFACE SCIENCE | 1992年 / 60-1卷
关键词：
D O I：
10.1016/0169-4332(92)90507-T
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Thin films of bismuth-titanate (BiTi3O12) have been prepared by dual ion-beam sputtering. The growth process of films was observed in situ by reflection high-energy electron diffraction (RHEED). The crystalline quality of the films was characterize Rutherford backscattering (RBS) experiments. It was found that the growth of the BiTi3O12 films is influenced by a lattice mismatch between the Bi4Ti3O12 film and the substrate. Epitaxial growth of Bi4Ti3O12 films with a c-axis orientation was confirmed on LaAlO3 and SrTiO3 single crystals which have a small lattice matching condition for the Bi4Ti3O12 film. It is considered that the Bi4Ti3O12 film grows on the substrate with relaxing the lattice strain caused by the lattice mismatch as the film thickness increases.
引用
收藏
页码：749 / 753
页数：5
相关论文
共 50 条
  • [31] LEAKAGE CURRENT BEHAVIORS IN RAPID THERMAL ANNEALED BI4TI3O12 THIN-FILMS
    CHO, HJ
    JO, W
    NOH, TW
    APPLIED PHYSICS LETTERS, 1994, 65 (12) : 1525 - 1527
  • [32] PECULIARITIES OF BI4TI3O12 FILMS GROWN BY DC MAGNETRON SPUTTERING
    AGASIEV, AA
    ORBUKH, VI
    MAMEDOV, MZ
    JOURNAL DE PHYSIQUE III, 1994, 4 (12): : 2521 - 2529
  • [33] Epitaxial Bi4Ti3O12 thin film growth using Bi self-limiting function
    Migita, S
    Ota, H
    Fujino, H
    Kasai, Y
    Sakai, S
    JOURNAL OF CRYSTAL GROWTH, 1999, 200 (1-2) : 161 - 168
  • [34] THE NUCLEATION AND GROWTH OF THIN-FILMS DEPOSITED ON TO CARBON SUBSTRATE BY ION-BEAM SPUTTERING
    KANAYA, K
    YAMAMOTO, Y
    YONEHARA, K
    JOURNAL OF ELECTRON MICROSCOPY, 1989, 38 (04): : 273 - 273
  • [35] Effects of interfacial states on asymmetric polarization switchings of epitaxial Bi4Ti3O12 thin films
    Park, BH
    Hyun, SJ
    Mun, SH
    Noh, TW
    Lee, J
    Lee, SH
    Jo, W
    EPITAXIAL OXIDE THIN FILMS III, 1997, 474 : 3 - 8
  • [36] Microstructure and properties of ferroelectric Bi4Ti3O12 thin films
    Jiang, B
    Peng, JL
    Bursill, LA
    MODERN PHYSICS LETTERS B, 1999, 13 (26): : 933 - 945
  • [37] THE NUCLEATION AND GROWTH OF THIN-FILMS DEPOSITED ON TO CARBON SUBSTRATE BY ION-BEAM SPUTTERING
    KANAYA, K
    BABA, N
    YAMAMOTO, Y
    YONEHARA, K
    MICRON AND MICROSCOPICA ACTA, 1988, 19 (04): : 189 - 199
  • [38] EFFECTS OF OXYGEN CONCENTRATION ON GROWTH OF BI4TI3O12 THIN-FILMS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    MUHAMMET, R
    NAKAMURA, T
    SHIMIZU, M
    SHIOSAKI, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (9B): : 5215 - 5218
  • [39] MOLECULAR-BEAM EPITAXIAL-GROWTH OF ORGANIC THIN-FILMS
    KOMA, A
    PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1995, 30 (2-3): : 129 - 152
  • [40] SUPERCONDUCTING BERYLLIUM THIN-FILMS PREPARED BY ION-BEAM SPUTTERING
    TAKEI, K
    NAKAMURA, K
    MAEDA, Y
    JOURNAL OF APPLIED PHYSICS, 1985, 57 (11) : 5093 - 5094
12345