PLASMA ETCHING OF ALUMINUM

被引：0

|

作者：

REICHELDERFER, R ^{[1
]}

VOGEL, D ^{[1
]}

BERSIN, RL ^{[1
]}

机构：

[1] INT PLASMA CORP,HAYWARD,CA 94544

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1977年 / 124卷 / 08期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：C286 / C286

页数：1

相关论文

共 50 条

[1] PLASMA-ETCHING OF ALUMINUM
HESS, DW
[J]. SOLID STATE TECHNOLOGY, 1981, 24 (04) : 189 - 194
[2] SAFETY CONSIDERATIONS FOR PLASMA ALUMINUM ETCHING
CORN, G
BALDWIN, DG
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (03): : 909 - 912
[3] PLASMA-ETCHING OF ALUMINUM AND ITS ALLOYS
OHKUMA, T
MITSUI, K
INOUE, M
[J]. DENKI KAGAKU, 1981, 49 (04): : 240 - 244
[4] MASK CONSIDERATIONS IN THE PLASMA-ETCHING OF ALUMINUM
TRACY, CJ
MATTOX, R
[J]. SOLID STATE TECHNOLOGY, 1982, 25 (06) : 83 - 88
[5] PLASMA-ETCHING OF ALUMINUM FOR ULSI CIRCUITS
RILEY, PE
PENG, SS
FANG, L
[J]. SOLID STATE TECHNOLOGY, 1993, 36 (02) : 47 - &
[6] High density plasma etching of aluminum silicon copper
Dang, K
[J]. PROCEEDINGS OF THE INTERNATIONAL SYMPOSIUM ON THIN FILM MATERIALS, PROCESSES, RELIABILITY, AND APPLICATIONS: THIN FILM PROCESSES, 1998, 97 (30): : 133 - 143
[7] PLASMA-ETCHING OF ALUMINUM - A COMPARISON OF CHLORINATED ETCHANTS
DANNER, DA
DALVIE, M
HESS, DW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (03) : 669 - 673
[8] SPECTRAL FEATURES OF A HF DISCHARGE PLASMA IN ETCHING ALUMINUM
GUSEV, VV
DOLGOPOLOV, VM
SLOVETSKII, DI
SHELYKHMANOV, EF
[J]. HIGH TEMPERATURE, 1983, 21 (01) : 19 - 25
[9] OPTICAL ENDPOINT DETECTION FOR THE PLASMA-ETCHING OF ALUMINUM
CURTIS, BJ
[J]. SOLID STATE TECHNOLOGY, 1980, 23 (04) : 129 - 132
[10] INVESTIGATION OF ALUMINUM PLASMA-ETCHING BY SOME HALOGENIZED GASES
NAKAMURA, M
ITOGA, M
BAN, Y
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) : C90 - C90

← 1 2 3 4 5 →