PLASMA ETCHING OF ALUMINUM

被引:0
|
作者
REICHELDERFER, R [1 ]
VOGEL, D [1 ]
BERSIN, RL [1 ]
机构
[1] INT PLASMA CORP,HAYWARD,CA 94544
关键词
D O I
暂无
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:C286 / C286
页数:1
相关论文
共 50 条
  • [41] Characterization and residue elimination of hot aluminum etching in a transformer coupled plasma etcher
    Kopalidis, PM
    Vertommen, J
    Badenes, G
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1996, 143 (05) : 1763 - 1768
  • [42] Effects of helicon-wave-plasma etching on the charging damage of aluminum interconnects
    Lin, W.
    Kang, T.-K.
    Perng, Y.-Ch.
    Dai, B.-T.
    Cheng, H.-Ch.
    [J]. Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1998, 37 (07): : 3867 - 3870
  • [43] GENOTOXICITY ASSESSMENT OF WASTE PRODUCTS OF ALUMINUM PLASMA-ETCHING WITH THE SOS CHROMOTEST
    RAABE, F
    JANZ, S
    WOLFF, G
    MERTEN, H
    LANDROCK, A
    BIRKENFELD, T
    HERZSCHUH, R
    [J]. MUTATION RESEARCH, 1993, 300 (02): : 99 - 109
  • [44] Etching of the Aluminum Foil Surface Using High-Frequency Plasma to Produce a Nanoporous Aluminum Oxide Membrane
    Amirbekova, Gulzhanat
    Alpysbayeva, Balaussa
    Erlanuly, Erasyl
    Smirnov, Vladimir
    [J]. PROCEEDINGS OF THE 2021 IEEE CONFERENCE OF RUSSIAN YOUNG RESEARCHERS IN ELECTRICAL AND ELECTRONIC ENGINEERING (ELCONRUS), 2021, : 2411 - 2414
  • [45] PREFERENTIAL LATERAL CHEMICAL ETCHING IN REACTIVE ION ETCHING OF ALUMINUM AND ALUMINUM-ALLOYS
    SCHAIBLE, PM
    SCHWARTZ, GC
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 377 - 380
  • [46] Notch profile defect in aluminum alloy etching using high-density plasma
    Tabara, Suguru
    [J]. Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1996, 35 (4 B): : 2456 - 2462
  • [47] Notch profile defect in aluminum alloy etching using high-density plasma
    Tabara, S
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (4B): : 2456 - 2462
  • [48] PLASMA-ASSISTED ETCHING OF ALUMINUM IN CCL4-CL2 MIXTURES
    DAGOSTINO, R
    CAPEZZUTO, P
    CRAMAROSSA, F
    FRACASSI, F
    [J]. PLASMA CHEMISTRY AND PLASMA PROCESSING, 1989, 9 (04) : 513 - 525
  • [49] ELECTROCHEMICAL TUNNEL ETCHING OF ALUMINUM
    ALWITT, RS
    UCHI, H
    BECK, TR
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (08) : C318 - C319
  • [50] ETCHING ALUMINUM FOR ADHESIVE BONDING
    ARROWSMITH, DJ
    MOTH, DA
    VICKERY, CM
    [J]. TRANSACTIONS OF THE INSTITUTE OF METAL FINISHING, 1988, 66 : 112 - 115