DEGRADATION BEHAVIOR OF AIGAAS DOUBLE-HETEROSTRUCTURE LASER-DIODES AGED UNDER PULSED OPERATING-CONDITIONS

被引：3
|
作者：
YOSHIDA, JI [1 ]
CHINO, KI [1 ]
WAKITA, K [1 ]
机构：
[1] NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,DIV INTEGRATED ELECTR DEV,MUSASHINO,TOKYO 180,JAPAN
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1982年 / 18卷 / 05期
关键词：
D O I：
10.1109/JQE.1982.1071612
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：879 / 884
页数：6
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