MODELING OF A DEPLETION-MODE MOSFET

被引：6
|
作者：
PARIKH, CD
VASI, J
机构：
[1] Indian Inst of Technology, Bombay, India, Indian Inst of Technology, Bombay, India
来源：
SOLID-STATE ELECTRONICS | 1987年 / 30卷 / 07期
关键词：
D O I：
10.1016/0038-1101(87)90107-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new depletion-mode MOSFET model is derived which includes the effects of the diffusion current along the channel and the actual band-bending at the semiconductor surface. Because of the latter, a single drain current equation is obtained for the device operating in the linear region, irrespective of whether the channel surface is in accumulation or depletion. A separate equation for the diffusion current is derived. Numerical results indicate that diffusion current is not significant in the linear regime of operation and, by extrapolation, in saturation.
引用
收藏
页码：699 / 703
页数：5
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