DEPLETION-MODE MOSFETS OPEN A CHANNEL INTO POWER SWITCHING

被引：0
|
作者：
ALEXANDER, M
BLANCHARD, D
ABRAMCZYK, ER
机构：
来源：
ELECTRONIC DESIGN | 1984年 / 32卷 / 13期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：281 / &
相关论文
共 50 条
  • [1] A NEW CHANNEL-DOPING TECHNIQUE FOR HIGH-VOLTAGE DEPLETION-MODE POWER MOSFETS
    UEDA, D
    SHIMANO, A
    KITAMURA, I
    TAKAGI, H
    KANO, G
    IEEE ELECTRON DEVICE LETTERS, 1986, 7 (05) : 311 - 313
  • [2] HOT CARRIER EFFECTS IN DEPLETION-MODE MOSFETS
    DAS, NC
    KHOKLE, WS
    MOHANTY, S
    INTERNATIONAL JOURNAL OF ELECTRONICS, 1986, 60 (04) : 495 - 503
  • [3] THRESHOLD VOLTAGE CHARACTERISTICS OF DEPLETION-MODE MOSFETS
    WORDEMAN, MR
    DENNARD, RH
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (09) : 1025 - 1030
  • [4] HOT-CARRIER EFFECTS IN DEPLETION-MODE MOSFETS
    ONG, TC
    KO, PK
    HU, C
    SOLID-STATE ELECTRONICS, 1989, 32 (01) : 33 - 36
  • [5] Hot-carrier effects in depletion-mode MOSFETs
    Ong, T.C., 1600, (32):
  • [6] HOT-HOLE-INDUCED DEGRADATION IN DEPLETION-MODE N-CHANNEL MOSFETS
    STOEV, I
    BAUER, F
    BALK, P
    ELECTRONICS LETTERS, 1985, 21 (01) : 30 - 31
  • [7] Depletion-mode Ga2O3 MOSFETs
    Higashiwaki, Masataka
    Sasaki, Kohei
    Kamimura, Takafumi
    Wong, Man Hoi
    Krishnamurthy, Daivasigamani
    Kuramata, Akito
    Masui, Takekazu
    Yamakoshi, Shigenobu
    2013 71ST ANNUAL DEVICE RESEARCH CONFERENCE (DRC), 2013,
  • [8] ANOMALOUS OSCILLATION IN DEPLETION-MODE MOSFETS AT LOW-TEMPERATURE
    CARRUTHERS, C
    MAVOR, J
    ELECTRONICS LETTERS, 1987, 23 (05) : 178 - 179
  • [9] Characteristics of depletion-mode In0.53Ga0.47As MOSFETs
    Kang, SJ
    Han, JC
    Kim, JH
    Jo, SJ
    Park, SW
    Song, JI
    COMPOUND SEMICONDUCTORS 2001, 2002, (170): : 131 - 137
  • [10] Depletion-mode GaAs MOSFETs with negligible drain current drift and hysteresis
    Wang, YC
    Hong, M
    Kuo, JM
    Mannaerts, JP
    Kwo, J
    Tsai, HS
    Krajewski, JJ
    Chen, YK
    Cho, AY
    INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, : 67 - 70
12345