FABRICATION OF MULTIPLE-ELECTRODE CHIRPED-GRATING-TUNABLE DISTRIBUTED-FEEDBACK LASERS

被引：4
|
作者：
CHEN, N
NAKANO, Y
TADA, K
机构：
[1] Department of Electronic Engineering, University of Tokyo, Bunkyo-ku, Tokyo, 113
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 1B期
关键词：
DISTRIBUTED-FEEDBACK SEMICONDUCTOR LASER; DFB LASER; TUNABLE LASER; CHIRPED GRATING; LINEAR CHIRPING; MULTIPLE ELECTRODES; WAVELENGTH TUNING; CONTINUOUS TUNING; GAALAS/GAAS;
D O I：
10.1143/JJAP.33.856
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
This paper describes fabrication and characteristics of GaAlAs/GaAs wavelength tunable distributed-feedback (DFB) semiconductor lasers with linearly chirped grating. In a two-section device, a single-mode quasi-continuous tuning range of 2.2 nm at around 868 nm has been achieved. This resulted mainly from the chirped grating structure effect rather than-the free carrier plasma effect or the thermal tuning. A comparison of the two-section DFB laser with a conventional uniform grating has also been carried out.
引用
收藏
页码：856 / 858
页数：3
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