GROWTH OF HIGHLY ORIENTED TIN OXIDE THIN-FILMS BY LASER EVAPORATION DEPOSITION

被引：45
|
作者：
DAI, CM
SU, CS
CHUU, DS
机构：
[1] NATL TSING HUA UNIV,INST NUCL SCI,HSINCHU 300,TAIWAN
[2] NATL CHIAO TUNG UNIV,DEPT ELECTROPHYS,HSINCHU,TAIWAN
来源：
APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 18期
关键词：
D O I：
10.1063/1.103998
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Conducting and transparent thin films of tin oxide were prepared by the laser evaporation of an undoped powder-pressed polycrystalline tin oxide target onto unheated substrates. After characterizing these films, the results reveal that the films are highly oriented and with a grain size ∼0.2 μm. The nearly stoichiometric deposition of tin oxide films with deposition rates exceeding 24 Å per pulse was obtained by this method. The lowest resistivity obtained is 3.0×10-3 Ω cm. The visible transmittance (between 4000 and 7000 Å) is above 75%.
引用
收藏
页码：1879 / 1881
页数：3
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