REACTIVE ION ETCHING OF SILICON WITH CL2-AR

被引：0
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作者：
POGGE, HB
BONDUR, JA
BURKHARDT, PJ
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1978年 / 125卷 / 11期
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中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
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页码：C470 / C470
页数：1
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