SEMICONDUCTOR-FERROELECTRIC NON-VOLATILE MEMORY USING ANOMALOUS HIGH PHOTOVOLTAGES IN FERROELECTRIC CERAMICS

被引:18
|
作者
BRODY, PS
机构
关键词
D O I
10.1063/1.92283
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:153 / 155
页数:3
相关论文
共 50 条
  • [31] Ferroelectric switching of poly(vinylidene difluoride-trifluoroethylene) in metal-ferroelectric-semiconductor non-volatile memories with an amorphous oxide semiconductor
    Gelinck, G. H.
    van Breemen, A. J. J. M.
    Cobb, B.
    [J]. APPLIED PHYSICS LETTERS, 2015, 106 (09)
  • [32] A BEOL Compatible, 2-Terminals, Ferroelectric Analog Non-Volatile Memory
    Begon-Lours, Laura
    Halter, Mattia
    Pineda, Diana Davila
    Popoff, Youri
    Bragaglia, Valeria
    La Porta, Antonio
    Jubin, Daniel
    Fompeyrine, Jean
    Offrein, Bert Jan
    [J]. 2021 5TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE (EDTM), 2021,
  • [33] Scalable printed electronics: an organic decoder addressing ferroelectric non-volatile memory
    Tse Nga Ng
    David E. Schwartz
    Leah L. Lavery
    Gregory L. Whiting
    Beverly Russo
    Brent Krusor
    Janos Veres
    Per Bröms
    Lars Herlogsson
    Naveed Alam
    Olle Hagel
    Jakob Nilsson
    Christer Karlsson
    [J]. Scientific Reports, 2
  • [34] Device performance of ferroelectric/correlated oxide heterostructures for non-volatile memory applications
    Hoffman, J.
    Hong, X.
    Ahn, C. H.
    [J]. NANOTECHNOLOGY, 2011, 22 (25)
  • [35] Overview of one transistor type of hybrid organic ferroelectric non-volatile memory
    Young Tea Chun
    Daping Chu
    [J]. Instrumentation, 2015, 2 (01) : 65 - 74
  • [36] Lead based ferroelectric capacitors for low voltage non-volatile memory applications
    Univ of Maryland, College Park, United States
    [J]. Integr Ferroelectr, 1-4 (159-177):
  • [37] Lead based ferroelectric capacitors for low voltage non-volatile memory applications
    Aggarwal, S
    Prakash, AS
    Song, TK
    Sadashivan, S
    Dhote, AM
    Yang, B
    Ramesh, R
    Kisler, Y
    Bernacki, SE
    [J]. INTEGRATED FERROELECTRICS, 1998, 19 (1-4) : 159 - 177
  • [38] Non-Volatile Ferroelectric Memory with Position-Addressable Polymer Semiconducting Nanowire
    Hwang, Sun Kak
    Min, Sung-Yong
    Bae, Insung
    Cho, Suk Man
    Kim, Kang Lib
    Lee, Tae-Woo
    Park, Cheolmin
    [J]. SMALL, 2014, 10 (10) : 1976 - 1984
  • [39] A novel non-volatile flip-flop using a ferroelectric capacitor
    Ueda, M
    Otsuka, T
    Toyoda, K
    Morimoto, K
    Morita, K
    [J]. ISAF 2002: PROCEEDINGS OF THE 13TH IEEE INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS, 2002, : 155 - 158
  • [40] Fully Transparent Non-volatile Memory Thin-Film Transistors Using an Organic Ferroelectric and Oxide Semiconductor Below 200 °C
    Yoon, Sung-Min
    Yang, Shinhyuk
    Byun, Chunwon
    Park, Sang-Hee K.
    Cho, Doo-Hee
    Jung, Soon-Won
    Kwon, Oh-Sang
    Hwang, Chi-Sun
    [J]. ADVANCED FUNCTIONAL MATERIALS, 2010, 20 (06) : 921 - 926