ELECTRICAL CHARACTERISTICS OF ION-IMPLANTED P-CHANNEL MOS-TRANSISTORS

被引：11

作者：

NAKAMURA, K ^{[1
]}

KAMOSHIDA, M ^{[1
]}

机构：

[1] NIPPON ELECT CO LTD, IC DIV, 1753 SHIMONUMABE, KAWASAKI 211, JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 01期

关键词：

D O I：

10.1063/1.1662981

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：334 / 340

页数：7

共 50 条

[1] ELECTRICAL CHARACTERISTICS OF ION-IMPLANTED P-CHANNEL MOS-TRANSISTORS
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[2] ANNEALING CHARACTERISTICS OF ION-IMPLANTED P-CHANNEL MOS-TRANSISTORS
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[3] INVESTIGATION OF STABILITY OF P-CHANNEL ION-IMPLANTED MOS-TRANSISTORS BY BT TREATMENTS
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[4] NOISE CHARACTERISTICS OF ION-IMPLANTED MOS-TRANSISTORS
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[5] CHARACTERISTICS OF P-CHANNEL MOS FIELD-EFFECT TRANSISTORS WITH ION-IMPLANTED CHANNELS
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[7] CONDUCTANCE OF ION-IMPLANTED BURIED-CHANNEL MOS-TRANSISTORS
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[9] ELECTRICAL CHARACTERISTICS OF BORON-IMPLANTED N-CHANNEL MOS-TRANSISTORS
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[10] ION-IMPLANTED COMPLEMENTARY MOS-TRANSISTORS IN LOW-VOLTAGE CIRCUITS
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