ELECTRICAL CHARACTERISTICS OF ION-IMPLANTED P-CHANNEL MOS-TRANSISTORS

被引：0

作者：

NAKAMURA, K ^{[1
]}

KAMOSHIDA, M ^{[1
]}

机构：

[1] NIPPON ELECT CO LTD, TOKYO, JAPAN

来源：

NEC RESEARCH & DEVELOPMENT | 1974年 / 33期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：29 / 37

页数：9

共 50 条

[1] ELECTRICAL CHARACTERISTICS OF ION-IMPLANTED P-CHANNEL MOS-TRANSISTORS
NAKAMURA, K
KAMOSHIDA, M
JOURNAL OF APPLIED PHYSICS, 1974, 45 (01) : 334 - 340
[2] ANNEALING CHARACTERISTICS OF ION-IMPLANTED P-CHANNEL MOS-TRANSISTORS
NAKAMURA, K
KAMOSHID.M
JOURNAL OF APPLIED PHYSICS, 1974, 45 (10) : 4262 - 4267
[3] INVESTIGATION OF STABILITY OF P-CHANNEL ION-IMPLANTED MOS-TRANSISTORS BY BT TREATMENTS
NAKAMURA, K
KAMOSHIDA, M
JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (10) : 1635 - 1636
[4] NOISE CHARACTERISTICS OF ION-IMPLANTED MOS-TRANSISTORS
NAKAMURA, K
KUDOH, O
KAMOSHIDA, M
JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) : 3189 - 3193
[5] CHARACTERISTICS OF P-CHANNEL MOS FIELD-EFFECT TRANSISTORS WITH ION-IMPLANTED CHANNELS
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SHOPBELL, ML
MAI, CC
PALMER, RB
SOLID-STATE ELECTRONICS, 1972, 15 (11) : 1237 - +
[6] IMPLANT DOSE PROFILE DEPENDENCE OF ELECTRICAL CHARACTERISTICS OF ION-IMPLANTED MOS-TRANSISTORS
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NAKAMURA, K
KAMOSHID.M
JOURNAL OF APPLIED PHYSICS, 1974, 45 (10) : 4514 - 4519
[7] CONDUCTANCE OF ION-IMPLANTED BURIED-CHANNEL MOS-TRANSISTORS
SCHEMMERT, W
GABLER, L
HOEFFLINGER, B
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (12) : 1313 - 1319
[8] CHARGE TRANSPORT IN ION-IMPLANTED BURIED CHANNEL MOS-TRANSISTORS
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AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS, 1979, 33 (01): : 23 - 31
[9] ELECTRICAL CHARACTERISTICS OF BORON-IMPLANTED N-CHANNEL MOS-TRANSISTORS
KAMOSHIDA, M
SOLID-STATE ELECTRONICS, 1974, 17 (06) : 621 - 626
[10] ION-IMPLANTED COMPLEMENTARY MOS-TRANSISTORS IN LOW-VOLTAGE CIRCUITS
SWANSON, RM
MEINDL, JD
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1972, SC 7 (02) : 146 - +

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